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Enhanced Electrical Performance of Ge nMOSFET with Rapid Remote Plasma Oxidation Treatment
Conference paper

Enhanced Electrical Performance of Ge nMOSFET with Rapid Remote Plasma Oxidation Treatment

Jia-Cheng Liu, Dun-Bao Ruan, Kuei-Shu Chang-Liao and Guan-Ting Liu
2023 Silicon Nanoelectronics Workshop, SNW 2023, pp.73-74
2023
DOI: https://doi.org/10.23919/SNW57900.2023.10183959

Abstract

Hardware and Architecture Electrical and Electronic Engineering Safety Risk Reliability and Quality Electronic Optical and Magnetic Materials
A rapid remote plasma oxidation (RRPO) treatment was applied on the alloy-like oxygen-adsorbing hafnium nitride interfacial layer in Ge nMOSFET device. The sample with a RRPO treatment for 10 s exhibits lower EOT, JG,DIT , S.S. values, narrower frequency dispersion, higher ION/IOFF,ION and Gm values, due to the reduction of border trap and oxygen vacancy.

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