Enhanced Hole Mobility in High-k Gated pMOSFETs by Dislocation-free Epitaxial Si/Ge Super-lattice Channel

Conference paper

Li-Jung Liu, Kuei-Shu Chang-Liao, Chung-Hao Fu, Hsiao-Chi Hsieh, Chun-Chang Lu, Tien-Ko Wang, P.Y. Gu and M.J. Tsai

2012 International Conference on Solid State Devices and Materials 2012 International Conference on Solid State Devices and Materials

2012

Abstract

Hole Mobility;High-k Gated;pMOSFETs;Dislocation-free;Epitaxial Si/Ge;Super-lattice Channel

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Title: Enhanced Hole Mobility in High-k Gated pMOSFETs by Dislocation-free Epitaxial Si/Ge Super-lattice Channel
Creators - without role: Li-Jung Liu
Kuei-Shu Chang-Liao - 國立清華大學原子科學院工程與系統科學系
Chung-Hao Fu
Hsiao-Chi Hsieh
Chun-Chang Lu
Tien-Ko Wang
P.Y. Gu
M.J. Tsai
Identifiers: 9957774772406774
Academic Unit: Institute of Nuclear Engineering and Science, College of Nuclear Science, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper
Publication Details: 2012 International Conference on Solid State Devices and Materials 2012 International Conference on Solid State Devices and Materials