Enhanced Operation Characteristics in Poly-Si Nanowire Charge-Trapping Flash Memory Device with Ge Buried Channel

Conference paper

Chia-Hsin Cheng, Kuei-Shu Chang-Liao, Hsin-Kai Fang and Chien-Pang Huang

2016 International Conference on Solid State Devices and Materials 2016 International Conference on Solid State Devices and Materials

2016

Abstract

Poly-Si Nanowire;Charge-Trapping;Flash Memory Device;Ge Buried Channel

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Title: Enhanced Operation Characteristics in Poly-Si Nanowire Charge-Trapping Flash Memory Device with Ge Buried Channel
Creators - without role: Chia-Hsin Cheng
Kuei-Shu Chang-Liao - 國立清華大學原子科學院工程與系統科學系
Hsin-Kai Fang
Chien-Pang Huang
Identifiers: 9957775837406774
Academic Unit: Institute of Nuclear Engineering and Science, College of Nuclear Science, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper
Publication Details: 2016 International Conference on Solid State Devices and Materials 2016 International Conference on Solid State Devices and Materials