Abstract
A novel Ge condensation process using low temperature supercritical phase fluid (SCF) was proposed on SiGe/Si GAAFET. Device with a Ge condensation by SCF treatment exhibits higher rmION, lower rmIOFF, larger rmION/rmIOFF, lower S.S., higher uniformity and better reliability, due to the enhanced mobility by the reduction of vacancy defects in SiGe and interface traps or/and reversed tensile strain in Si.