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Enhanced thermal and morphological stability of Ni(Si1-xGe x) growth on BF2+-preamorphized Si 0.8Ge0.2 substrate
Conference paper

Enhanced thermal and morphological stability of Ni(Si1-xGe x) growth on BF2+-preamorphized Si 0.8Ge0.2 substrate

J.H. He, W.W. Wu and L.J. Chen
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol.237(1-2), pp.174-178
08/2005
DOI: https://doi.org/10.1016/j.nimb.2005.04.096
Appears in  keyword about Physics

Abstract

Germanosilicide Implantation Ni silicide Preamorphization SiGe
The stability of nickel germanosilicide formed on Ni thin films on Si 0.8 Ge 0.2 was found to be enhanced by the BF2+-preamorphization of the epitaxial Si-Ge layer. Agglomeration of polycrystalline Ni(Si 1-x Ge x ) is retarded by 100 °C in the BF2+-implanted samples. The growth of laterally uniform Ni(Si 1-x Ge x ) and resistance to agglomeration at high temperature in the BF2+-implanted samples are attributed to the retardation of the growth of Ni(Si 1-x Ge x ) grains by the presence of fluorine bubbles. Sheet resistance measurement was found to correlate well with the transmission electron microscope observation. © 2005 Elsevier B.V. All rights reserved.

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