摘要
This study addresses the stability issue of beta-Ga2O3 Schottky barrier diodes (SBDs) under continuous switching stress. By optimizing epitaxial surface conditions and implementing Nitrogen-implanted edge termination (ET), devices exhibit enhanced static and dynamic stability. Static results reveal the reverse voltage of > 1 kV (at 0.01 A/cm(2)) and a Baliga figure of merit (BFOM) of over 169 MW/cm(2). A continuous switching stress test was conducted, which is intended to provide guidance on system-level implications, demonstrating negligible turn-on voltage (V-on) shift (< 50 mV) and current collapse (< 0.8%) under stress voltage (V-stress)of -300 V (125 degrees C), attributed to the reduced surface oxygen vacancies (52% lower) and suppressed electric field crowding by ET. X-ray photoelectron spectra (XPS) depth profile reveals a reduction of interface NiOx TCAD simulations confirm the relocation of peak electric fields to the bulk, mitigating surfacerelated V-on shift. This paper figures out the key factors for enhancing static and dynamic performance of beta-Ga2O3 SBDs in high temperature high-voltage power switching applications.