- Title
- Enhancing Continuous Switching Stability of β -Ga2O3 SBDs Through Epitaxial Surface Condition and Edge Termination Optimizations
- Creators - without role
- 敬源 黃
- Publication Details
- International Symposium on Power Semiconductor Devices and ICs (ISPSD)
- Grant note
- 國科會
- Identifiers
- 9957775377706774
- Academic Unit
- Institute of Electronics Engineering, College of Electrical Engineering and Computer Science, National Tsing Hua University
- Language
- English
- Resource Type
- Conference paper
Conference paper
Enhancing Continuous Switching Stability of β -Ga2O3 SBDs Through Epitaxial Surface Condition and Edge Termination Optimizations
International Symposium on Power Semiconductor Devices and ICs (ISPSD)
06/2025
Appears in Publications (2025–Present)
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