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Evaluation of Reliability and Lifetime of 650-V GaN-on-Si Power Devices Fabricated on 200-mm CMOS-Compatible Process Platform for High-Density Power Converter Application
Conference paper

Evaluation of Reliability and Lifetime of 650-V GaN-on-Si Power Devices Fabricated on 200-mm CMOS-Compatible Process Platform for High-Density Power Converter Application

Shan Yin, Yiming Lin, Ronghui Hao, Shoudong Jin, Chuan He, Weigang Yao, Xingjun Li, Qingyuan He, Xiaoqing Pu, Xiaoliang Su, …
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, Vol.2022-May, pp.93-96
2022
DOI: https://doi.org/10.1109/ISPSD49238.2022.9813684

Abstract

Acceleration factor dynamic on-resistance failure criteria GaN switching lifetime Engineering (all)
The degradation of dynamic on-resistance (dRon) of GaN HEMT may lead to an increase of power dissipation or even thermal failure in the power converter. In this work, a comprehensive evaluation of reliability and switching lifetime of a 650-V commercial GaN-on-Si HEMT is conducted. The device shows a quite stable dRon (< 1.2x) by adopting a strain layer. The emission microscope is used to detect the photoemission in situ based on the wafer-level switching stress system. The criteria of 1.3x dRon is defined based on the efficiency and temperature in the system application. Finally, a novel acceleration factor extraction method is proposed, which predicts a 29-year lifetime at 400 V with 100-ppm failure rate.

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