Excellent Electrical Characteristics in Ge p-MOSFETs with H2 and NH3 Plasma Treated Interfacial Layers

Conference paper

Jiayi Huang, Kuei-Shu Chang-Liao, Chen-Chien Li, Yan-Lin Li, Chia-Chi Tsai, Chao-Chen Ku, Po-Yen Chen, Tse-Jung Huang, Tzung-Yu Wu, Fu-Chuan Chu, …

2016

Abstract

Ge MOS devices;In-situ;Plasma treatment;Interfacial layer

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Title: Excellent Electrical Characteristics in Ge p-MOSFETs with H2 and NH3 Plasma Treated Interfacial Layers
Creators - without role: Jiayi Huang
Kuei-Shu Chang-Liao - 國立清華大學原子科學院工程與系統科學系
Chen-Chien Li
Yan-Lin Li
Chia-Chi Tsai
Chao-Chen Ku
Po-Yen Chen
Tse-Jung Huang
Tzung-Yu Wu
Fu-Chuan Chu
Shih-Han Yi
Identifiers: 9957773439206774
Academic Unit: Institute of Nuclear Engineering and Science, College of Nuclear Science, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper