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Excellent field emission from carbon nanotubes grown by microwave-heated chemical vapor deposition
Conference paper

Excellent field emission from carbon nanotubes grown by microwave-heated chemical vapor deposition

J.H. Huang, C.C. Chuang, C.H. Tsai and W.J. Chen
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol.21(4), pp.1655-1659
07/2003

Abstract

Condensed Matter Physics Electrical and Electronic Engineering
The effect of Ni thickness, growth temperature, and types of substrates on the growth of carbon nanotubes (CNT) was studied using microwave-heated chemical vapor deposition. The diameter and length of CNTs increased with the thickness of nickel films and applied microwave power. A CNT emitter grown on 80-nm-thick Ni at 900 W for 18 min showed an emission characteristic with turn-on field of 0.056 V/μm and current density of 160 mA/cm 2 at 4.5 V/μm.

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