Effect of Surface Ligands on Device Performance for Infrared Light-Emitting Diodes

Infrared (IR) emitted Quantum Dots (QDs) are fascinating materials with the unique feature of energy levels engineering based on ligand exchange. In this work, the ligand of QDs is modified to form the charge transport layer of IR light-emitting diodes (LEDs). The corresponding IRLEDs fabricated with all QDs materials can obtain electroluminescence (EL) peak of 1200 nm, including the wide full width at half maximum (FWHM), and an EQE of 4.5%. © 2024, John Wiley and Sons Inc. All rights reserved.