Fabrication and characterization of wafer-bonded GaAs- and InP-based III-V semiconductors for optoelectronic devices

Conference paper

Fabrication and characterization of wafer-bonded GaAs- and InP-based III-V semiconductors for optoelectronic devices

F. Shi, K.L. Chang, J. Epple, C.F. Xu, K.Y. Cheng and K.C. Hsieh

Materials Research Society 2003 Spring Meeting

2003

Abstract

optoelectronic;semiconductors;wafer-bonded;Fabrication

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Title: Fabrication and characterization of wafer-bonded GaAs- and InP-based III-V semiconductors for optoelectronic devices
Creators - without role: F. Shi
K.L. Chang
J. Epple
C.F. Xu
K.Y. Cheng
K.C. Hsieh
Identifiers: 9957773676406774
Academic Unit: National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper
Publication Details: Materials Research Society 2003 Spring Meeting