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Fabrication and device characterization of large linear dynamic range tunnel magnetoresistance (TMR) sensors for system applications
Conference paper

Fabrication and device characterization of large linear dynamic range tunnel magnetoresistance (TMR) sensors for system applications

Fang-Ming Chen, I-Jung Wang, Ding-Yeong Wang, Shan-Yi Yang, Yu-Chen Hsin, Yao-Jen Chang, Hsin-Han Lee, Guan-Long Chen, Yi-Ching Kuo, Yi-Hui Su, …
2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020, pp.104-105
08/2020
DOI: https://doi.org/10.1109/VLSI-TSA48913.2020.9203712

Abstract

Artificial Intelligence Hardware and Architecture Electrical and Electronic Engineering Electronic Optical and Magnetic Materials
The large linear dynamic range tunnel magnetoresistance (TMR) sensors were designed and successfully fabricated in 8 inch Silicon process line for current / magnetic sensing applications. In this paper, the TMR sensors show their performances strongly depend on wafer etching conditions and aspect ratios (ARs) of magnetic tunnel junctions (MTJs). During the fine-tuning of etching conditions and AR of MTJs, the packaged TMR sensors have large linear dynamic range ( 200 Oe) and suitable characteristics to apply in current measurement system.

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