Abstract
Nickel silicide nanowires (NSNWs) have been fabricated and characterized. We propose a fabrication process for one-dimensional silicon nanowires (SiNWs) using scanning probe lithography (SPL) technology and anisotropic wet etching with tetramethylammonium hydroxide (TMAH) solution on a (100) Si layer of silicon on insulator (SOI) substrate. Subsequently, the thin Nickel films (∼50nm) evaporated on SiNWs and the nickel monosilicide was formed by solid-state reaction between nickel and silicon under a rapid thermal annealing (RTA) in N 2 ambient for 1 min. Then, the electrical properties of the SiNWs and NSNWs have also been examined and compared. ©2005 IEEE.