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Fabrication of quantum wires by wet etching techniques
Conference paper   Peer reviewed

Fabrication of quantum wires by wet etching techniques

H.W. Yang, S.F. Horng and H.L. Hwang
Materials Research Society Symposium Proceedings, Vol.325, pp.85-91
1994

Abstract

Quantum wires structures were fabricated by patterning quantum well samples with electron beam lithography and various wet chemical etching procedures. Wire structures with 800 angstroms wire width were achieved by wet etching in NH 4 OH/H 2 O 2 /H 2 O (20:7:973). These samples were characterized by scanning electron microscopy (SEM), photoluminescence (PL), and polarization-dependent photoluminescence excitation (PLE) measurements. The PL spectra show significantly stronger peaks than that taken from an en-etched quantum well sample. A wire width of 400 angstroms was estimated from the blue shift of PL peaks. A 22% anisotropy was observed from polarization-dependent PLE spectra, further corroborating the existence of two-dimensional quantum confinement.

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