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Fast visible-light phototransistor using CVD-synthesized large-area bilayer WSe<inf>2</inf>
Conference paper

Fast visible-light phototransistor using CVD-synthesized large-area bilayer WSe2

Pang-Shiuan Liu, Chang-Hsiao Chen, Wei-Ting Hsu, Chih-Pin Lin, Tzu-Ping Lin, Li-Jen Chi, Chao-Yuan Chang, Shih-Chieh Wu, Wen-Hao Chang, Lain-Jong Li, …
Technical Digest - International Electron Devices Meeting, IEDM, Vol.2015-February(February), pp.5.7.1-5.7.4
02/2015
Appears in  keyword about Physics

Abstract

Electronic Optical and Magnetic Materials Condensed Matter Physics Materials Chemistry Electrical and Electronic Engineering
P-channel transition metal dichalcogenide ultrathin-body phototransistor (UTB-PT) with a response time as fast as 100 μs has been demonstrated for the first time using the CVD-synthesized large-area bilayer WSe2. Because of its excellent compatibility with mass production, the application of WSe2 UTB-PT for high-speed proximity interactive display has been proposed.

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