Abstract
The effect of Ta content on the ferroelectric properties of SrBi 2 Ta 1.8 O 9 (SBT) thin films which had been synthesized with MOD and spin coating techniques was investigated in present study. It is found that the electrical properties and microstructures of SBT are greatly affected by the Ta content. Polarization measurements revealed that the Ta-deficiency in SBT led to a relatively low coercive field (2E c ∼ 108 kV/cm) and a high remanent polarization (2P r ∼ 18.4μC/cm 2 ). Once increases the Ta ratio, the 2P r .value decreasing. The Ta-rich SrBi 2 Ta 2.2 O 9 thin films exhibit the poor crystallinity and the poor ferroelectric properties. The improvement of ferroelectric properties in Ta-deficient SBT specimens could be attributed to the uniformly large grain structure and the highly (220) preferential orientation. It is believed that the incorporation of the Ta vacancies during synthesizing process plays an important role in promoting the crystallinity of SiBi 2 Ta 1.8 O 9 films.