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First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3D Integration with Dual Workfunction Gate for Ultra Low-power SRAM and RF Applications
Conference paper

First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3D Integration with Dual Workfunction Gate for Ultra Low-power SRAM and RF Applications

S.-W. Chang, T.-H. Lu, C.-Y. Yang, C.-J. Yeh, M.-K. Huang, C.-F. Meng, P.-J. Chen, T.-H. Chang, Y.-S. Chang, J.-W. Jhu, …
Technical Digest - International Electron Devices Meeting, IEDM, Vol.2021-December, pp.34.4.1-34.4.4
2021
DOI: https://doi.org/10.1109/IEDM19574.2021.9720675
Appears in  keyword about Physics

Abstract

Electronic Optical and Magnetic Materials Condensed Matter Physics Materials Chemistry Electrical and Electronic Engineering
In this work, we demonstrate vertically stacked heterogeneous dual-workfunction gate complementary FET (CFET) inverters and 6T-SRAM with n-Type IGZO and p-Type polysilicon channels for the first time. The dual-workfunction gate structure with adjusted gate biasing allows the adjustment of channel potential to match the threshold voltage of transistors for CMOS and SRAM operation. High-frequency IGZO RF devices with p-Type silicon isolation are fabricated simultaneously with the same process. Novel etching process based on fluorine-based gas with an extremely high-etching selectivity between the source/drain metal and the IGZO facilitates the definition of the source/drain region. IGZO surface treated with fluorine-based gas during over-etching step allows a low leakage current shallow passivation layer to optimize direct current characteristics.

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