First InP/InGaAs PNP HBT grown by metal organic chemical vapor deposition

D. Cui; S. Hsu; D. Pavlidisi

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First InP/InGaAs PNP HBT grown by metal organic chemical vapor deposition

D. Cui, S. Hsu and D. Pavlidisi

Conference Proceedings - International Conference on Indium Phosphide and Related Materials, pp.224-227

2001

Abstract

The MOCVD growth of InP/InGaAs PNP HBT layers and the successful fabrication and operation at high frequency of devices made on such layers are reported for the first time. The PNP HBTs employed a zinc-doped InP layer as emitter while the base was made with a 500Å thick n-type InGaAs layer doped at 5×l0 ¹⁸ cm ^-3 . Microwave measurements indicated f _T of more than 11 GHz at J _c =8.25×10 ⁴ A/cm ² for these MOCVD-grown InP/InGaAs PNP HBTs.

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Title: First InP/InGaAs PNP HBT grown by metal organic chemical vapor deposition
Creators - without role: D. Cui - University of Michigan
S. Hsu - University of Michigan
D. Pavlidisi - University of Michigan
Grant note: IEEE
Identifiers: 9957768532406774
Academic Unit: College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: English
Resource Type: Conference paper
Publication Details: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, pp.224-227

First InP/InGaAs PNP HBT grown by metal organic chemical vapor deposition

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