Abstract
4H-SiC RF BJTs on a semi-insulating (>10 <sup>5</sup> Ω-cm) substrate were designed and fabricated for the first time using an n-p-n triple mesa-etch and interdigitated emitter-base finger design. On-wafer small signal s-parameter measurements were performed on a 4-finger device with 3 Ωm emitter stripe width and 150 Ωm finger length. Both, the current gain and unilateral power gain, were calculated from the measured s-parameters, yielding an f <sub>T</sub> of 7 GHz and an f <sub>MAX</sub> of 5.2 GHz biased in common-emitter configuration at J <sub>E</sub> = 10.6 kA/cm <sup>2</sup> and V <sub>CE</sub> = 20 V. These are the highest RF figures of merit reported to date for any SiC bipolar transistor. The calculated maximum available power gain (G <sub>MAX</sub> ) is 18.6-dB at 500 MHz and 12.4-dB at 1 GHz, demonstrating the potential of 4H-SiC BJTs for both UHF and L-band applications. © 2005 IEEE.