Abstract
Using Ga 2 O 3 (Gd 2 O 3 ) as a gate dielectric and conventional ion implantation for source, drain, and isolation, we have fabricated and demonstrated a GaAs complementary metal-oxide-semiconductor field-effect-transistor (CMOS) inverter.
- Title
- First demonstration of GaAs CMOS
- Creators - without role
- M. Hong - Alcatel-Lucent (France)J.N. Baillargeon - Alcatel-Lucent (France)J. Kwo - Alcatel-Lucent (France)J.P. Mannaerts - Alcatel-Lucent (France)A.Y. Cho - Alcatel-Lucent (France)
- Identifiers
- 9957769803906774
- Academic Unit
- National Tsing Hua University
- Language
- English
- Resource Type
- Conference paper
- Publication Details
- IEEE International Symposium on Compound Semiconductors, Proceedings, pp.345-350