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First demonstration of heterogenous complementary FETs utilizing Low-Temperature (200 °c) Hetero-Layers Bonding Technique (LT-HBT)
Conference paper

First demonstration of heterogenous complementary FETs utilizing Low-Temperature (200 °c) Hetero-Layers Bonding Technique (LT-HBT)

T.-Z. Hong, W.-H. Chang, A. Agarwal, Y.-T. Huang, C.-Y. Yang, T.-Y. Chu, H.-Y. Chao, Y. Chuang, S.-T. Chung, J.-H. Lin, …
Technical Digest - International Electron Devices Meeting, IEDM, Vol.2020-December, pp.15.5.1-15.5.4
12/2020
DOI: https://doi.org/10.1109/IEDM13553.2020.9372001
Appears in  keyword about Physics

Abstract

Electronic Optical and Magnetic Materials Condensed Matter Physics Materials Chemistry Electrical and Electronic Engineering
For the first time, we demonstrate heterogeneous complementary FETs (hCFETs) with Ge and Si channels fabricated with a layer transfer technique. The 3D channel stacking integration particularly employs a low-temperature (200 °C) hetero-layers bonding technique (LT-HBT) realized by a surface activating chemical treatment at room temperature, enabling Ge channels bonded onto Si wafers. Furthermore, to obtain symmetric performance in n/p FETs, a multi-channel structure of two-channel Si and one-channel Ge is also implemented. Wafer-scale LT-HBT is demonstrated successfully, showing new opportunities for the ultimate device footprint scaling with heterogeneous integration.

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