First demonstration of low-power monolithic transimpedance amplifier using InP/GaAsSb/InP DHBTs

Xin Zhu; Jing Wang; Dimitris Pavlidis; Shuohung Hsu

doi:10.1109/MWSYM.2005.1516531

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First demonstration of low-power monolithic transimpedance amplifier using InP/GaAsSb/InP DHBTs

Xin Zhu, Jing Wang, Dimitris Pavlidis and Shuohung Hsu

IEEE MTT-S International Microwave Symposium Digest, Vol.2005, pp.101-103

2005

DOI: https://doi.org/10.1109/MWSYM.2005.1516531

Abstract

Heterojunction bipolar transistors

Microwave amplifiers

MMICs

A low-power transimpedance amplifier is presented based on novel InP/GaAsSb/InP DHBT technology. This is the first monolithic circuit demonstration using Sb-based InP DHBTs. Self-biased from a single 2.55 V dc supply, the broadband transimpedance amplifier in shunt-shunt feedback exhibited a 6.0 dB gain, 8.0 GHz bandwidth, 43 dBΩ transimpedance, and a corresponding gain-bandwidth of 1.13 THz-Ω while consuming only 15.3 mW dc power. The single-stage buffer amplifier achieved a good Gain-Bandwidth-Product per dc power figure-of-merit (GBP/P _dc ) of 1. 05 GHz/mW. © 2005 IEEE.

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Title: First demonstration of low-power monolithic transimpedance amplifier using InP/GaAsSb/InP DHBTs
Creators - without role: Xin Zhu - University of Michigan
Jing Wang - University of Michigan
Dimitris Pavlidis - Technische Universität Darmstadt
Shuohung Hsu - Tsinghua University
Grant note: IEEE Microwave Theory and Techniques Society, MTT-
Identifiers: 0780388461; 9780780388468; 9957771564706774
Academic Unit: College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: English
Resource Type: Conference paper
Publication Details: IEEE MTT-S International Microwave Symposium Digest, Vol.2005, pp.101-103

First demonstration of low-power monolithic transimpedance amplifier using InP/GaAsSb/InP DHBTs

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