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First demonstration of ultrafast laser annealed monolithic 3D gate-all-around CMOS logic and FeFET memory with near-memory-computing macro
Conference paper

First demonstration of ultrafast laser annealed monolithic 3D gate-all-around CMOS logic and FeFET memory with near-memory-computing macro

Fu-Kuo Hsueh, Je-Min Hung, Sheng-Po Huang, Yen-Hsiang Huang, Cheng-Xin Xue, Chang-Hong Shen, Jia-Min Shieh, Wen-Cheng Chiu, Chao-Cheng Lin, Bo-Yuan Chen, …
Technical Digest - International Electron Devices Meeting, IEDM, Vol.2020-December, pp.40.4.1-40.4.4
12/2020
DOI: https://doi.org/10.1109/IEDM13553.2020.9371892
Appears in  keyword about Physics

Abstract

Electronic Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering Materials Chemistry
For the first time, ultrafast laser annealed BEOL gate-all-around (GAA) transistor and FeFET memory were demonstrated with monolithic 3D near-memory-computing (NMC) circuit. The GAA MOSFETs employing ultrafast picosecond visible laser dopant activation exhibit record-high Ion (nFETs=407 uA/um, pFETs=345 uA/um). The BEOL FeFETs memory exhibits large memory window ΔVth = 1.2V, more than 106 cycle endurance. Moreover, the 3D stackability of the GAA MOSFETs and FeFET memory bit cell enable reduces the area of the NMC circuitry and improve the readout throughput.

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