Abstract
This work investigates the formation of arsenic segregated Ytterbium and Nickel silicide using low-temperature microwave annealing. Two types of dopant segregation approaches, implant-before-silicidation and implantation-through- metal, are performed to examine the electrical properties of the microwave annealed silicide. Results of current-voltage curves and dopant distribution profiles are compared with those using rapid thermal annealing. © 2013 IEEE.