Formation of cobalt-silicide nanocrystals in Ge-doped dielectric layer for the application in nonvolatile memory

Conference paper

Y. D. Chen, J. Y. Lin, C. W. Hu, T. C. Chang and W. F. Wu

Symposium on Nano Device Technology Symposium on Nano Device Technology

2009

Abstract

cobalt-silicide nanocrystals;Ge-doped dielectric layer;nonvolatile memory

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Title: Formation of cobalt-silicide nanocrystals in Ge-doped dielectric layer for the application in nonvolatile memory
Creators - without role: Y. D. Chen
J. Y. Lin
C. W. Hu
T. C. Chang
W. F. Wu - 國立清華大學原子科學院工程與系統科學系
Publication Details: Symposium on Nano Device Technology Symposium on Nano Device Technology
Identifiers: 9957774525206774
Academic Unit: Department of Engineering and System Science, College of Nuclear Science, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper