Abstract
High-quality, thin relaxed Si 0.8 Ge 0.2 layers grown on Si(1 0 0) by ultrahigh-vacuum chemical vapor deposition (UHVCVD) have been formed with hydrogen (H)-implantation and subsequent thermal annealing. H-implantation was used to introduce a layer with a high density of defects (cavities) below a 200-nm-thick strained Si 0.8 Ge 0.2 . The peak of the implanted profile was located just ∼50 nm below the Si 0.8 Ge 0.2 /Si interface. The dependence of residual strain in pseudomorphic Si 0.8 Ge 0.2 layer on the annealing temperature has been investigated. By adjusting the dose of H-implantation and the subsequent annealing conditions, almost relaxed (∼95%) Si 0.8 Ge 0.2 layers with a smooth surface were achieved. The method provides a simple approach for the formation of thin relaxed Si 0.8 Ge 0.2 with reduction in surface roughness for advanced complementary metal-oxide-semiconductor electronic devices. Published by Elsevier B.V.