Abstract
A 1um-gate length field effect thin film transistor was fabricated on a glass using indium zinc oxide (IZO) as the channel layer. The IZO film was deposited by rf magnetron sputtering at room temperature. A thin SiN <sub>x</sub> film was used as the gate insulator by plasma enhanced chemical vapor depesition. The depletion mode transistor has a threshold voltage -2.5V, maximum transconductance 7.5mS/mm at V <sub>DS</sub> =SV, and saturation current 2mA/mm at V <sub>GS</sub> =0V. The field effect mobility is 14.5 cm <sup>2</sup> .V <sup>-1</sup> .S <sup>-1</sup> , and the subthreshold voltage swing is 2.08V/decade. The on/off ratio is > 10 <sup>5</sup> . The frequency response are measured at V <sub>GS</sub> =0V and V <sub>DS</sub> =3V. The cut-off frequency, ft, is 180MHz and the maximum oscillation frequency, fmax, is 155MHz. © The Electrochemical Society.