From MRAM to SP-MTJ: An Ultrathin Mo Insertion in Magnetic Tunnel Junction-based P-bits for Solving Combinatorial Optimization Problem

Conference paper

2025 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2025 - Proceedings of Technical Papers

2025

Abstract

Magnetic recording;Molybdenum;MRAM devices;Nanotechnology;Problem solving;Stochastic systems;Tunnel junctions

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Title: From MRAM to SP-MTJ: An Ultrathin Mo Insertion in Magnetic Tunnel Junction-based P-bits for Solving Combinatorial Optimization Problem
Creators - without role: 世杰張
Publication Details: 2025 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2025 - Proceedings of Technical Papers
Identifiers: 9957767147906774
Academic Unit: Department of Computer Science, College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: English
Resource Type: Conference paper