摘要
In this work, a Terahertz Extremely-Large-Area Emitter (THz ELAE) with a 1 cm 2 active area is implemented to address directivity, tunability, and power limitations in conventional photoconductive antennas (PCAs). The enlarged active area of the device allows implementation of patterned optical excitation that enables control over the THz radiation characteristics in the spatial, temporal and spectral domains. The device was fabricated using i-line photolithography and a maximum peak-to-peak amplitude of 330 mV with 1.8 THz bandwidth was successfully measured using a THz time domain spectroscopy system when a bias voltage of 8 V and optical excitation of 200 mW was applied to the device.