GaAs-based bipolar cascade light-emitting-diodes and superluminescent- diodes at the 1.04-μm wavelength regime

Shi-Hao Guol; Hung Wang Jr.; Yu-Huei Wu; Wei Lin; Ying-Jay Yang; Chi-Kuang Sun; Ci-Ling Pan; Jin-Wei Shi

doi:10.1109/LEOS.2008.4688755

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Conference paper

GaAs-based bipolar cascade light-emitting-diodes and superluminescent- diodes at the 1.04-μm wavelength regime

Shi-Hao Guol, Hung Wang Jr., Yu-Huei Wu, Wei Lin, Ying-Jay Yang, Chi-Kuang Sun, Ci-Ling Pan and Jin-Wei Shi

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, pp.589-590

2008

DOI: https://doi.org/10.1109/LEOS.2008.4688755

Abstract

We first demonstrate GaAs-based bipolar-cascade superluminescent-diodes by use of chirped multiple-quantum-wells in series by a tunnel junction, effectively minimizing the problem of non-uniform carrier-distribution among MQWs and operating around important bio-optical window of 1.04-μm wavelength. ©2008 IEEE.

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Title: GaAs-based bipolar cascade light-emitting-diodes and superluminescent- diodes at the 1.04-μm wavelength regime
Creators - without role: Shi-Hao Guol - National Taiwan University
Hung Wang Jr. - Department of Electrical Engineering , National Central University
Yu-Huei Wu - Land Mark Optoelectronics Corporation
Wei Lin - AU Optronics (Taiwan)
Ying-Jay Yang - National Taiwan University
Chi-Kuang Sun - National Taiwan University
Ci-Ling Pan - Department of Photonics , Chiao Tung University
Jin-Wei Shi - Department of Electrical Engineering , National Central University
Publication Details: Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, pp.589-590
Identifiers: 9781424419326; 9957772819006774
Academic Unit: National Tsing Hua University
Language: English
Resource Type: Conference paper

GaAs-based bipolar cascade light-emitting-diodes and superluminescent- diodes at the 1.04-μm wavelength regime

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