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GaN on Si RF performance with different AlGaN back barrier
Conference paper

GaN on Si RF performance with different AlGaN back barrier

Chang-Yan Hsieh, Hui-Yu Chen, Po-Tsung Tu, Jui-Chin Chen, Hsin-Yun Yang, Po-Chun Yeh, De Hsieh, Hsueh-Hsing Liu, Yi-Keng Fu, Shyh-Shyuan Sheu, …
2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings
2023
DOI: https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134089

Abstract

Artificial Intelligence Computer Networks and Communications Computer Science Applications Hardware and Architecture Information Systems Electrical and Electronic Engineering
In this paper, the DC and RF device performance of AlGaN/GaN high-electron-mobility transistors (HEMTs) with different AlGaN back barrier thickness has been studied. The test results of the HEMTs with 50 nm back barrier exhibit Idssat=640 mA mm gm=405 mS mm, and on/off ratio = 1.5 E+04. In small-signal operation, cut-off frequency FT FMAX=59/127 GHz are achieved, which gives a high value of ( FT × Lg)=14.7 GHz ×μ m among the reported GaN-on-Si devices.

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