Gate- and drain- noise characteristics of AlGaN/GaN HEMTs and study of their origins

Conference paper

S. Hsu, D. Pavlidis, J. S. Moon, M. Micovic, D. Wong and T. Hussain

2003 Japan-United States Joint Workshop on Space Solar Power System (JUSPS'03), p.115

2002

Abstract

AlGaN/GaN;HEMTs

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Title: Gate- and drain- noise characteristics of AlGaN/GaN HEMTs and study of their origins
Creators - without role: S. Hsu - 國立清華大學電機資訊學院電機工程學系
D. Pavlidis
J. S. Moon
M. Micovic
D. Wong
T. Hussain
Publication Details: 2003 Japan-United States Joint Workshop on Space Solar Power System (JUSPS'03), p.115
Identifiers: 9957775620906774
Academic Unit: College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper