Gate and Read Disturb Failure Mechanisms in Source-Side Erased Flash EEPROM Memory Cell

Conference paper

Chrong Jung Lin, Hsin-Ming Chen and Charles Ching-Hsiang Hsu

International EDMS

1998

Abstract

Mechanisms;EEPROM

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Title: Gate and Read Disturb Failure Mechanisms in Source-Side Erased Flash EEPROM Memory Cell
Creators - without role: Chrong Jung Lin - 國立清華大學電機資訊學院電機工程學系
Hsin-Ming Chen
Charles Ching-Hsiang Hsu
Publication Details: International EDMS
Identifiers: 9957769223206774
Academic Unit: Institute of Electronics Engineering, College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper