Gate oxide defect localization and analysis by using conductive atomic force microscopy

Conference paper

Z.H. Lee, C.J. Lin, S.W. Lai and J.H. Chou

Conference Proceedings from the International Symposium for Testing and Failure Analysis, Vol.2005, pp.235-238

2005

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Title: Gate oxide defect localization and analysis by using conductive atomic force microscopy
Translated title: Gate oxide defect localization and analysis by using conductive atomic force microscopy
Creators - without role: Z.H. Lee - Taiwan Semiconductor Manufacture Company, Ltd., Taiwan , Science Park
C.J. Lin - Taiwan Semiconductor Manufacture Company, Ltd., Taiwan , Science Park
S.W. Lai - Taiwan Semiconductor Manufacture Company, Ltd., Taiwan , Science Park
J.H. Chou - Taiwan Semiconductor Manufacture Company, Ltd., Taiwan , Science Park
Identifiers: 9957771947106774
Academic Unit: Institute of Electronics Engineering, College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: English
Resource Type: Conference paper
Publication Details: Conference Proceedings from the International Symposium for Testing and Failure Analysis, Vol.2005, pp.235-238