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GaxIn1- xP/GaAs modulation-doped field effect transistor based on a quasi-one-dimensional electron gas
Conference paper

GaxIn1- xP/GaAs modulation-doped field effect transistor based on a quasi-one-dimensional electron gas

A. C. Chen, R. W. Grundbacher, I. Adesida, K. C. Hsieh and K. Y. Cheng
North American Conference on Molecular Beam Epitaxy
1993

Abstract

GaxIn1- xP/GaAs;modulation-doped;transistor;quasi-one-dimensional

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