Abstract
We demonstrate a plasmonic terahertz photoconductive antenna (PCA) based on thermal evaporated GeSn photoconductor. This GeSn plasmonic PCA prototype is fabricated through metal-oxide semiconductor (CMOS) compatible processes exhibiting its great potential for cost-effective, massive production. Furthermore, the designed GeSn terahertz emitter can be operated at telecom wavelength, which is well suitable for integrating with fiber-optics and Si photonics platform. Here, we demonstrate that the GeSn based plasmonic PCA performs a broadband spectrum over 2 THz.