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General scaling law of optical lithography optical theory
Conference paper

General scaling law of optical lithography optical theory

Chun-Kuang Chen, Tsai-Sheng Gau, Li-Jui Chen, Chi-Chuang Lee, Jaw-Jung Shin, Anthony Yen and Burn J. Lin
Proceedings of SPIE - The International Society for Optical Engineering, Vol.5377(PART 3), pp.1487-1498
2004

Abstract

DOF Ewald sphere Fourier space High NA Hyper NA K-space MEEF Numerical aperture OPE Optical lithography Reciprocal space Scaling Electronic Optical and Magnetic Materials Condensed Matter Physics Computer Science Applications Applied Mathematics Electrical and Electronic Engineering
The concept of system invariance is the principle of scaling law in optical lithography. Both the conservation of the intensity threshold of the aerial image and the invariant pupil filling of the diffracted light with the normalized numerical aperture (NA) have to be satisfactory in order to ensure the invariance for a system in a variety of optical settings. Two well-known scaling equations with k 1 and k 2 factors characterize the capability of the manufacturing process in microlithography. In theory, the validity of these two equations has to be based on the principle of invariance. Therefore, any optical parameters in exposure tool could be scaling validly and properly, once they obey the principle of invariance.

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