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Geometric Effect of Polygates on Nanoscale nMOSFETs Using Silicon-Carbon Alloy in Strain Engineering
Conference paper

Geometric Effect of Polygates on Nanoscale nMOSFETs Using Silicon-Carbon Alloy in Strain Engineering

C. C. Lee, C. H. Liu, H. H. Teng and T. L. Tzeng
TACT 2013 International Thin Films Conference TACT 2013 International Thin Films Conference
2013

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