Geometrical Effect of Poly Gate on Nanoscale NMOSFETs by Using Silicon-Carbon Alloy of Strain Engineering

Conference paper

C. C. Lee, C. H. Liu, H. H. Teng and Z. H. Chen

10th International Nanotech Symposium & Exhibition (NANO KOREA 2012) 10th International Nanotech Symposium & Exhibition (NANO KOREA 2012)

2012

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Title: Geometrical Effect of Poly Gate on Nanoscale NMOSFETs by Using Silicon-Carbon Alloy of Strain Engineering
Creators - without role: C. C. Lee - 國立清華大學工學院動力機械工程學系
C. H. Liu
H. H. Teng
Z. H. Chen
Identifiers: 9957774103106774
Academic Unit: Department of Power Mechanical Engineering, College of Engineering, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper
Publication Details: 10th International Nanotech Symposium & Exhibition (NANO KOREA 2012) 10th International Nanotech Symposium & Exhibition (NANO KOREA 2012)