Abstract
Near-infrared absorption at 2000-nm wavelength is observed in a Ge 1-x Sn x metal-semiconductor-metal (MSM) photodetector on a Si substrate. The device is fabricated by rapid melt growth method with graded Sn concentration up to 5-10%.
- Title
- Graded Ge1-xSnx photodetectors fabricated on Si substrates by rapid melt growth method
- Creators - without role
- Chih-Kuo Tseng - National Tsing Hua UniversityJia-Jiun Gao - National Tsing Hua UniversityLi-Chuan Weng - National Tsing Hua UniversityNeil Na - National Tsing Hua UniversityErh-Hao Chen - Industrial Technology Research InstituteMing-Chang M. Lee - National Tsing Hua University
- Publication Details
- IEEE International Conference on Group IV Photonics GFP, Vol.2015-October, pp.125-126
- Identifiers
- 9781479982554; 9957771706106774
- Copyright
- © 2015 IEEE.
- Academic Unit
- Institute of Photonics Technologies, College of Electrical Engineering and Computer Science, National Tsing Hua University
- Language
- English
- Resource Type
- Conference paper