Grain size effect of monolayer MoS2 transistors characterized by second harmonic generation mapping

Chih-Pin Lin; Li-Syuan Lyu; Ching-Ting Lin; Pang-Shiuan Liu; Wen-Hao Chang; Lain-Jong Li; Tuo-Hung Hou

doi:10.1109/IPFA.2015.7224436

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Conference paper

Grain size effect of monolayer MoS2 transistors characterized by second harmonic generation mapping

Chih-Pin Lin, Li-Syuan Lyu, Ching-Ting Lin, Pang-Shiuan Liu, Wen-Hao Chang, Lain-Jong Li and Tuo-Hung Hou

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, Vol.2015-August, pp.476-479

08/2015

DOI: https://doi.org/10.1109/IPFA.2015.7224436

Abstract

Electrical and Electronic Engineering

We investigated different CVD-synthesized MoS2 films, aiming to correlate the device characteristics with the grain size. The grain size of MoS2 can be precisely characterized through nondestructive second harmonic generation mapping based on the degree of inversion symmetry. The devices with larger grains at the channel region show improved on/off current ratio, which can be explained by the less carrier scattering caused by the grain boundaries.

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Title: Grain size effect of monolayer MoS2 transistors characterized by second harmonic generation mapping
Creators - without role: Chih-Pin Lin - Department of Electronics Engineering and Institute of Electronics , National Chiao Tung University
Li-Syuan Lyu - National Yang Ming Chiao Tung University
Ching-Ting Lin - National Yang Ming Chiao Tung University
Pang-Shiuan Liu - National Yang Ming Chiao Tung University
Wen-Hao Chang - Department of Electronics Engineering and Institute of Electronics , National Chiao Tung University
Lain-Jong Li - King Abdullah University of Science and Technology
Tuo-Hung Hou - Department of Electronics Engineering and Institute of Electronics , National Chiao Tung University
Identifiers: 9781479999286; 9781479999286; 9957773200606774
Academic Unit: National Tsing Hua University
Language: English
Resource Type: Conference paper
Publication Details: Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, Vol.2015-August, pp.476-479

Grain size effect of monolayer MoS2 transistors characterized by second harmonic generation mapping

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