Growth and charactarization of high quality GaN on silicon(111)

Li-Jen Chou; Y.L. Chueh; S.Y. Chiou; S. Gwo

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Conference paper

Growth and charactarization of high quality GaN on silicon(111)

Li-Jen Chou, Y.L. Chueh, S.Y. Chiou and S. Gwo

Proceedings - Electrochemical Society, Vol.11, pp.12-15

2003

Abstract

DIL

EDS

GaN

HRTEM

PEMBE

PL.

A diffusion inhibition layer (DIL) has been grown by plasma enhanced molecular beam epitaxy (PEMBE) and characterized by high resolution transmission electron microscopy (HRTEM). Data indicated that this DIL has successfully eased the Si inter-diffusion problem and enhanced the growth of the high quality GaN film on Si(111) substrate.

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Title: Growth and charactarization of high quality GaN on silicon(111)
Creators - without role: Li-Jen Chou - National Tsing Hua University
Y.L. Chueh - Dept. of Mat. Sci. and Engineering , National Tsing Hua University
S.Y. Chiou - Dept. of Mat. Sci. and Engineering , National Tsing Hua University
S. Gwo - Dept. of Mat. Sci. and Engineering , National Tsing Hua University
Publication Details: Proceedings - Electrochemical Society, Vol.11, pp.12-15
Identifiers: 9957773074506774
Academic Unit: Department of Materials Science and Engineering, College of Engineering, National Tsing Hua University; Institute of NanoEngineering and Microsystems, College of Engineering, National Tsing Hua University
Language: English
Resource Type: Conference paper

Growth and charactarization of high quality GaN on silicon(111)

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