Growth and characteristics of high optical quality lattice matched GaInAsP layers and GaInAsP/GaInAs quantum wells on InP by MBE using solid phosphorus and arsenic valved cracking cells

Conference paper

J. N. Baillargeon, A. Y. Cho, F. A. Thiel, P. J. Pearah and K. Y. Cheng

J-GLOBAL 1994 Int. Symp.Compound Semicond., Vol.141, p.173

1995

Abstract

arsenic valved cracking cells;phosphorus;quantum;MBE;GaInAsP/GaInAs;GaInAsP;lattice

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Title: Growth and characteristics of high optical quality lattice matched GaInAsP layers and GaInAsP/GaInAs quantum wells on InP by MBE using solid phosphorus and arsenic valved cracking cells
Creators - without role: J. N. Baillargeon
A. Y. Cho
F. A. Thiel
P. J. Pearah
K. Y. Cheng
Identifiers: 9957774246506774
Academic Unit: National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper
Publication Details: J-GLOBAL 1994 Int. Symp.Compound Semicond., Vol.141, p.173