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Growth of Al-free 0.98μm strained quantum well lasers on GaAs by solid MBE using phosphorus and arsenic valved cracking cells
Conference paper

Growth of Al-free 0.98μm strained quantum well lasers on GaAs by solid MBE using phosphorus and arsenic valved cracking cells

J. N. Baillargeon, K. Y. Cheng and A. Y. Cho
15th North American Conference on Molecular Beam Epitaxy
1995

Abstract

arsenic valved cracking cells;phosphorus;MBE;GaAs;lasers;quantum;Al-free

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