Abstract
A single‐crystalline epitaxial film of GaAs has been grown on Si using an ionized cluster beam technique. The native oxide layer on the silicon substrate was removed at 550 °C by use of an accelerated arsenic ion beam, instead of a high‐temperature desorption. During the growth the substrate temperature was maintained at 550 °C. Transmission electron microscopy and electron diffraction data suggest that the GaAs layer is an epitaxially grown single‐crystalline layer.