Abstract
The growth of Si and Be doped InP was performed using a solid red phosphorus source supplied from a valved cracking cell. The maximum free electron concentration achieved for the Si doped InP layers was 4.5 × 10 19 cm -3 while a maximum hole concentration of 2 × 10 19 cm -3 was measured for the Be doped layers. Attempts to increase the concentration further, using either Si or Be, produced layers with significantly fewer free carriers. Photoluminescence were recorded for the epitaxial InP. MBE with solid phosphorus offers a practical growth alternative to those processes requiring PH 3 .