Abstract
Special single layer resist systems were tailored to support fabrication of 1 micrometer CMOS test sites using an optical stepper. The six-mask self-aligned 1 micrometer CMOS technology has been reported by Hu et al(1983). This paper focusses on the resist systems used to fabricate these test sites, with the objective of achieving very high lithographic performance without having to use multi-layer resist systems. The resist selection criteria as well as two specific high-performance single layer resist systems are given and discussed with the process of each masking step. Typical linewidth and overlay results are given.