摘要
Halide perovskites, known for their remarkable optoelectronic properties beyond solar energy conversion, are increasingly explored for memristive devices, alongside the broader class of metallic halides. This presentation focuses on utilizing these materials for fabricating and understanding memristors. Memristors function as non-volatile memory elements capable of storing a continuum of resistance states, rather than merely discrete binary values. This inherent analog characteristic positions them as ideal candidates for developing energy-efficient, hardware-based neuromorphic computing architectures that emulate biological synaptic functions.
The underlying physical mechanisms governing the continuous conductance modulation (resistive switching) in halide perovskite memristors are multifaceted and critical to device performance. Key processes include ion migration leading to the formation and rupture of conductive filaments, as well as charge carrier trapping and detrapping dynamics associated with defect states. A thorough understanding and control of these mechanisms are paramount for engineering devices with desired characteristics like linearity and endurance.
This talk will provide an overview of the halide perovskite memristors, covering the fundamental physics, materials science considerations influencing switching behavior, and device engineering strategies. We will examine characteristics of both two-terminal device structures and three-terminal architectures.