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Heterojunction with intrinsic thin layer (HIT) solar cell under mechanical bending
Conference paper

Heterojunction with intrinsic thin layer (HIT) solar cell under mechanical bending

M.H. Lee, S.T. Chang, C.-W. Tai, J.-D. Shen and C.-C. Lee
Conference Record of the IEEE Photovoltaic Specialists Conference, pp.002891-002893
2011
DOI: https://doi.org/10.1109/PVSC.2011.6186550

Abstract

Control and Systems Engineering Industrial and Manufacturing Engineering Electrical and Electronic Engineering
The strain distribution and electrical characteristics of heterojunction with intrinsic thin layer (HIT) solar cell with mechanical bending was studied in this work. The efficiency decreased with mechanical strain increasing due to bandgap narrowing. The advantage of wafer thin down for HIT is not only decreasing electron-hole recombination, but also reducing variation of performance with mechanical strains. © 2011 IEEE.

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